FDMC3612-L701 Series

N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ

Catalog

N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDMC3612-L701	3.3 A 16 A	4 V	20 V	8-WDFN (3.3x3.3)	100 V	880 pF	2.3 W 35 W	110 mOhm	21 nC	8-PowerWDFN	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	N-Channel	6 V 10 V

Catalog

N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ

Key Features

• Max rDS(on)= 110 mΩ at VGS= 10 V, ID= 3.3 A

• Low Profile - 1 mm max in Power 33

• Max rDS(on)= 122 mΩ at VGS= 6 V, ID= 3.0 A

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.