FDMC6675BZ Series

P-Channel Power Trench® MOSFET -30V, -20A, 14.4mΩ

Catalog

P-Channel Power Trench® MOSFET -30V, -20A, 14.4mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDMC6675BZ	2865 pF	Surface Mount	8-PowerWDFN	65 nC	25 V	P-Channel	14.4 mOhm	4.5 V 10 V	9.5 A 20 A	30 V	2.3 W 36 W	3 V	MOSFET (Metal Oxide)	8-MLP (3.3x3.3)	-55 °C	150 °C

Catalog

P-Channel Power Trench® MOSFET -30V, -20A, 14.4mΩ

Key Features

• Max rDS(on)= 14.4 mΩ at VGS= -10 V, ID= -9.5 A

• Max rDS(on)= 27.0 mΩ at VGS= -4.5 V, ID= -6.9 A

• HBM ESD protection level of 8 kV typical(note 3)

• Extended VGSSrange (-25 V) for battery applications

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability

• Termination is Lead-free

Description

This part number is not recommended for new designs. Please apply NTTFS015P03P8ZTAG as a replacement. The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on)and ESD protection.