FDMC4435BZ Series

P-Channel Power Trench® MOSFET -30V, -18A, 20mΩ

Catalog

P-Channel Power Trench® MOSFET -30V, -18A, 20mΩ

Part	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMC4435BZ	3 V	8-PowerWDFN	8-MLP (3.3x3.3)	20 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	30 V	2.3 W 31 W	-55 °C	150 °C	Surface Mount	25 V	P-Channel	46 nC	2045 pF
ON Semiconductor FDMC4435BZ-F127-L701	3 V	8-PowerWDFN	8-MLP (3.3x3.3)	20 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	30 V	2.3 W 31 W	-55 °C	150 °C	Surface Mount	25 V	P-Channel	53 nC	2045 pF

Catalog

P-Channel Power Trench® MOSFET -30V, -18A, 20mΩ

Key Features

• Max rDS(on)= 20.0mΩ at VGS= -10V, ID= -8.5A

• Max rDS(on)= 37.0mΩ at VGS= -4.5V, ID= -6.3A

• Extended VGSSrange (-25V) for battery applications

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability

• HBM ESD protection level >7kV typical

• 100% UIL Tested

• Termination is Lead-free and RoHS Compliant

Description

This P-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.