FDMC2512SDC Series

N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM 25V, 40A, 2.0mΩ

Catalog

N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM 25V, 40A, 2.0mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package
ON Semiconductor FDMC2514SDC	44 nC	N-Channel	2705 pF	24 A 40 A	3 W 60 W	Surface Mount	MOSFET (Metal Oxide)	25 V	4.5 V 10 V	3.5 mOhm	20 V	-55 °C	150 °C	8-PowerTDFN	3 V	Dual Cool ™ 33
ON Semiconductor FDMC2512SDC

Catalog

N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM 25V, 40A, 2.0mΩ

Key Features

• Dual Cool™ Top Side Cooling PQFN package

• Max rDS(on)= 3.5 mΩ at VGS= 10 V, ID= 22.5 A

• Max rDS(on)= 4.7 mΩ at VGS= 4.5 V, ID= 18 A

• High performance technology for extremely low rDS(on)

• SyncFET Schottky Body Diode

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.