FDMC012N03 Series

N-Channel Power Trench® MOSFET 30 V, 1.23 mΩ

Catalog

N-Channel Power Trench® MOSFET 30 V, 1.23 mΩ

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMC012N03	30 V	12 V	1.23 mOhm	-55 °C	150 °C	Surface Mount	2 V	N-Channel	Power33	4.5 V 10 V	35 A 185 A	MOSFET (Metal Oxide)	110 nC	2.3 W 64 W	8-PowerWDFN	8183 pF

Catalog

N-Channel Power Trench® MOSFET 30 V, 1.23 mΩ

Key Features

• Max rDS(on)= 1.23 mΩ at VGS= 10 V, ID= 35 A

• Max rDS(on)= 1.46 mΩ at VGS= 4.5 V, ID= 32 A

• High performance technology for extremely low rDS(on)

• Termination is Lead-free

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.