FDMB2308PZ Series

Dual Common Drain P-Channel PowerTrench® MOSFET -20V, -7A, 36mΩ

Catalog

Dual Common Drain P-Channel PowerTrench® MOSFET -20V, -7A, 36mΩ

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Supplier Device Package	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
ON Semiconductor FDMB2308PZ	Surface Mount	36 mOhm	800 mW	6-MLP (2x3)	Logic Level Gate	-55 °C	150 °C	MOSFET (Metal Oxide)	3030 pF	2 P-Channel (Dual) Common Drain	30 nC	1.5 V

Catalog

Dual Common Drain P-Channel PowerTrench® MOSFET -20V, -7A, 36mΩ

Key Features

• Max rS1S2(on)= 36 mΩ at VGS= -4.5 V, ID= -5.7 A

• Max rS1S2(on)= 50 mΩ at VGS= -2.5 V, ID= -4.6 A

• Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm

• HBM ESD protection level 2.8 kV (Note 3)

• RoHS Compliant

Description

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on ON Semiconductor’s advanced PowerTrench®process with state of the art MircoFET Leadframe, the FDMB2308PZ minimizes both PCB space and rS1S2(on).