FDMC2523P Series

P-Channel QFET® MOSFET -150V, -3A, 1.5Ω

Catalog

P-Channel QFET® MOSFET -150V, -3A, 1.5Ω

Part	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Technology
ON Semiconductor FDMC2523P	5 V	P-Channel	3 A	Surface Mount	270 pF	8-MLP (3.3x3.3)	10 V	150 V	30 V	-55 °C	150 °C	9 nC	42 W	1.5 Ohm	8-PowerWDFN	MOSFET (Metal Oxide)

Catalog

P-Channel QFET® MOSFET -150V, -3A, 1.5Ω

Key Features

• Max rDS(on)= 1.5Ω at VGS= -10V, ID= -1.5A

• Low Crss( typical 10pF)

• Fast Switching

• Low gate charge ( typical 6.2 nC )

• Improved dv / dt capability

• RoHS compliant

Description

These P-Channel MOSFET enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.