FDMC2D8N025S Series

N-Channel PowerTrench® SyncFETTM 25V, 124A, 1.9mΩ

Catalog

N-Channel PowerTrench® SyncFETTM 25V, 124A, 1.9mΩ

Part	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMC2D8N025S	Surface Mount	16 V	25 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Power33	4.5 V 10 V	N-Channel	3 V	124 A	63 nC	47 W	1.9 mOhm	8-PowerWDFN	4615 pF

Catalog

N-Channel PowerTrench® SyncFETTM 25V, 124A, 1.9mΩ

Key Features

• Max rDS(on)= 1.9 mΩ at VGS = 10 V, ID= 28 A

• Max rDS(on)= 2.4 mΩ at VGS = 4.5 V, ID= 25 A

• High Performance Technology for Extremely Low rDS(on)

• SyncFET™ Schottky Body Diode

• 100% UIL Tested

• RoHS Compliant

Description

The FDMC2D8N025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.