FDMC007N08LC Series

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 66A, 7.0mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 66A, 7.0mΩ

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Technology	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Power - Max
ON Semiconductor FDMC007N08LC	Surface Mount	-55 °C	150 °C	57 W	20 V	66 A	2940 pF	7 mOhm	80 V	41 nC	2.5 V	4.5 V 10 V	N-Channel	8-PowerWDFN	MOSFET (Metal Oxide)	8-PQFN Power33	3.3 mm	3.3 mm
ON Semiconductor FDMC007N30D	Surface Mount	-55 °C	150 °C			46 A		11.6 mOhm	30 V	34 nC	3 V			8-PowerWDFN	MOSFET (Metal Oxide)	8-Power33 (3x3)			2 N-Channel (Dual)	1110 pF 2360 pF	1.9 W 2.5 W

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 66A, 7.0mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 7.0 m at VGS= 10 V, ID= 21 A

• Max rDS(on)= 10.4 m at VGS= 4.5 V, ID= 17 A

• 5V Drive Capable

• 50% lower Qrrthan other MOSFET suppliers

• Lowers switching noise/EMI

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.