FDMA530PZ Series

P-Channel PowerTrench® MOSFET-30V, -6.8A, 35mΩ

Catalog

P-Channel PowerTrench® MOSFET-30V, -6.8A, 35mΩ

Part	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs
ON Semiconductor FDMA530PZ	MOSFET (Metal Oxide)	30 V	24 nC	1070 pF	4.5 V 10 V	6-MicroFET (2x2)	25 V	2.4 W	-55 °C	150 °C	3 V	Surface Mount	P-Channel	35 mOhm

Catalog

P-Channel PowerTrench® MOSFET-30V, -6.8A, 35mΩ

Key Features

• Max. RDS(on)= 35mΩ at VGS= -10V, ID= -6.8A

• Max. RDS(on)= 65mΩ at VGS= -4.5V, ID= -5.0A

• Low profile -0.8mm maximum -in the new package MicroFET 2X2 mm

• HBM ESD protection level > 3k V typical (Note 3)

• Free from halogenated compounds and antimony oxides

• RoHS compliant

Description

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance.The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.