FDMA6676PZ Series

Single P-Channel PowerTrench® MOSFET -30V, -11A, 13.5mΩ

Catalog

Single P-Channel PowerTrench® MOSFET -30V, -11A, 13.5mΩ

Part	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDMA6676PZ	25 V	6-PowerWDFN	2.6 V	-55 °C	150 °C	30 V	13.5 mOhm	P-Channel	Surface Mount	6-MicroFET (2x2)	4.5 V 10 V	11 A	MOSFET (Metal Oxide)	2.4 W	46 nC

Catalog

Single P-Channel PowerTrench® MOSFET -30V, -11A, 13.5mΩ

Key Features

• Ultra Low RDS(on)

• Advanced WDFN 2x2x0.65mm Package with Exposed Drain Pads

• Pb−Free, Halogen Free/BFR Free

Description

This device is an ultra low resistance P-Channel FET. It is designed for power line load switching applications and reverse polarity protection. It is especially optimized for voltage rails that can climb as high as 25V. Typical end systems include laptop computers, tablets and mobile phone. Applications include battery protection, input power line protection and charge path protection, including USB and other charge paths. The FDMA6676PZ has an enhanced VGS rating of 25V specifically designed to simplify installation. When used as reverse polarity protection, with gate tied to ground and drain tied to V input, it is designed to support operating input voltages that can raise as high as 25V without the need for external Zener protection on the gate. Its small 2x2x0.8 form factor make it an ideal part for mobile and space constrained applications.