FDMA8878 Series

Single N-Channel Power Trench® MOSFET 30V, 9.0A, 16mΩ

Catalog

Single N-Channel Power Trench® MOSFET 30V, 9.0A, 16mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Power Dissipation (Max) [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDMA8878-F130	4.5 V 10 V	9 A 10 A	Surface Mount	MOSFET (Metal Oxide)	900 mW	6-VDFN Exposed Pad	720 pF	12 nC	16 mOhm	3 V	N-Channel	6-MicroFET (2x2)	30 V	20 V	-55 °C	150 °C

Single N-Channel Power Trench® MOSFET 30V, 9.0A, 16mΩ

• Max rDS(on)= 16 mΩ at VGS = 10 V, ID= 9.0 A

• Max rDS(on)= 19 mΩ at VGS = 4.5 V, ID= 8.5 A

• High performance trench technology for extremely low rDS(on)

• Fast switching speed

• RoHS Compliant

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been optimized for rDS(on), switching performance.