FDMA6023PZT Series

Dual P-Channel PowerTrench® MOSFET -20V, -3.6A, 60mΩ

Catalog

Dual P-Channel PowerTrench® MOSFET -20V, -3.6A, 60mΩ

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDMA6023PZT	20 V	1.5 V	2 P-Channel	885 pF	700 mW	Logic Level Gate	17 nC	6-UDFN Exposed Pad	-55 °C	150 °C	6-MicroFET (2x2)	MOSFET (Metal Oxide)	Surface Mount	60 mOhm	3.6 A
ON Semiconductor FDMA6023PZT	20 V	1.5 V	2 P-Channel	885 pF	700 mW	Logic Level Gate	17 nC	6-UDFN Exposed Pad	-55 °C	150 °C	6-MicroFET (2x2)	MOSFET (Metal Oxide)	Surface Mount	60 mOhm	3.6 A

Catalog

Dual P-Channel PowerTrench® MOSFET -20V, -3.6A, 60mΩ

Key Features

• Max rDS(on)= 60 mΩ at VGS= -4.5 V, ID= -3.6 A

• Max rDS(on)= 80 mΩ at VGS= -2.5 V, ID= -3.0 A

• Max rDS(on)= 110 mΩ at VGS= -1.8 V, ID= -2.0 A

• Max rDS(on)= 170 mΩ at VGS= -1.5 V, ID= -1.0 A

• Low Profile-0.55 mm maximum - in the new package MicroFET 2x2 mm Thin

• HBM ESD protection level > 2.4 kV typical (Note 3)

• RoHS Compliant

• Free from halogenated compounds and antimony oxides

Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.