FDMA910PZ Series

P-Channel PowerTrench® MOSFET -20V, -9.4A, 20mΩ

Catalog

P-Channel PowerTrench® MOSFET -20V, -9.4A, 20mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDMA910PZ	2805 pF	Surface Mount	1.5 V	8 V	-55 °C	150 °C	29 nC	1.8 V 4.5 V	P-Channel	20 mOhm	MOSFET (Metal Oxide)	2.4 W	20 V	6-MicroFET (2x2)	9.4 A

Catalog

P-Channel PowerTrench® MOSFET -20V, -9.4A, 20mΩ

Key Features

• Max rDS(on)= 20 mΩ at VGS= -4.5 V, ID= -9.4 A

• Max rDS(on)= 24 mΩ at VGS= -2.5 V, ID= -8.6 A

• Max rDS(on)= 34 mΩ at VGS= -1.8 V, ID= -7.2 A

• Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm

• HBM ESD protection level > 2.8k V typical (Note 3)

• Free from halogenated compounds and antimony oxides

• RoHS Compliant

Description

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.