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ON Semiconductor
| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
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NVHL070N120M3SSilicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L | Discrete Semiconductor Products | 1 | Active | The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. |
NVHL072N65S3Single N-Channel Power MOSFET SUPERFET<sup>®</sup> III, Easy Drive, 650 V , 44 A, 72 mΩ, TO-247 | Single FETs, MOSFETs | 1 | Active | SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. |
NVHL075N065SC1Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 57 mohm, 650 V, M2, TO247-3L | FETs, MOSFETs | 1 | Active | EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. |
NVHL080N120SC1ASilicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L | Discrete Semiconductor Products | 2 | Active | EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. |
NVHL095N65S3FSUPERFET III MOSFET, 36A, 95mΩ, 650V in TO-247 | Single FETs, MOSFETs | 1 | Active | SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability |
NVHL095N65S3HFSUPERFET III MOSFET, 650V, 95mΩ, 36A FRFET fast recovery | Discrete Semiconductor Products | 1 | Active | SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III HF version provides fast recovery for improved efficiency in high speed switching applications |
NVHL110N65S3HFSingle N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, TO-247 fast recovery | Discrete Semiconductor Products | 1 | Active | SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III HF version provides fast recovery for improved efficiency in high speed switching applications. |
NVHL160N120SC1Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L | FETs, MOSFETs | 1 | Active | EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. |
NVJD4152PDual P−Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mΩ | FETs, MOSFETs | 1 | Active | Automotive Power MOSFET ideal for low power applications. 20V, 260 mΩ, Dual P-channel MOSFET with ESD protection in SC-88 package. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. |
NVJD5121NDual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω | Arrays | 1 | Active | Automotive Power MOSFET ideal for low power applications. 60V 295mA 1.6 Ω Dual N-Channel SC−88 with ESD Protection, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. |
| Part | Category | Description |
|---|---|---|
ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |