NVHL160N120SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L

Part	Grade	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Qualification	FET Type
ON Semiconductor NVHL160N120SC1	Automotive	4.3 V	TO-247-3	Through Hole	1200 V	119 W	665 pF	-55 °C	175 ░C	17 A	TO-247-3	224 mOhm	-15 V	25 V	34 nC	AEC-Q101	N-Channel

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L

Key Features

• 1200V rated

• High Speed Switching and Low Capacitance

• Qualified for Automotive According to AEC−Q101

Description

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.