NVJD5121N Series

Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω

Catalog

Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω

Part	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Supplier Device Package
ON Semiconductor NVJD5121NT2G	1.6 Ohm	250 mW	295 mA	2.5 V	6-TSSOP SC-88 SOT-363	26 pF	AEC-Q101	60 V	0.9 nC	Automotive	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	2 N-Channel	SC-88 SC70-6 SOT-363

Catalog

Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω

Key Features

• Leading Edge Trench Technology for Low RDS(on)

• Low Gate Threshold

• Low Input Capacitance

• ESD Protected Gate

Description

Automotive Power MOSFET ideal for low power applications. 60V 295mA 1.6 Ω Dual N-Channel SC−88 with ESD Protection, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.