NVHL080N120SC1A Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L

Part	Current - Continuous Drain (Id) @ 25°C	Grade	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max) [Min]	Vgs (Max) [Max]	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Qualification
ON Semiconductor NVHL080N120SC1A	31 A	Automotive	1670 pF	56 nC	110 mOhm	1200 V	178 W	-15 V	25 V	TO-247-3	TO-247-3	4.3 V	N-Channel	Through Hole	-55 °C	175 ░C	AEC-Q101
ON Semiconductor NVHL080N120SC1	44 A	Automotive	1670 pF	56 nC	110 mOhm	1200 V	348 W	-15 V	25 V	TO-247-3	TO-247-3	4.3 V	N-Channel	Through Hole	-55 °C	175 ░C	AEC-Q101

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L

Key Features

• 1200V rated

• Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A

• High Speed Switching and Low Capacitance

• 100% UIL Tested

• Qualified for Automotive According to AEC−Q101

• Devices are Pb−Free and are RoHS Compliant

Description

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.