NVHL110N65S3HF Series

Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, TO-247 fast recovery

Catalog

Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, TO-247 fast recovery

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Qualification	Supplier Device Package	Technology	Vgs (Max)	Package / Case	Grade	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NVHL110N65S3HF	10 V	110 mOhm	-55 °C	150 °C	240 W	AEC-Q101	TO-247-3	MOSFET (Metal Oxide)	30 V	TO-247-3	Automotive	N-Channel	30 A	650 V	2753 pF	5 V	Through Hole	58 nC

Catalog

Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, TO-247 fast recovery

Key Features

• Best in Class body diode

• Internal Rg

• Low Lower RDS (ON)/Same Packages

• Lower FOM (RDS (ON) maxX RDS (ON) maxX EOSS)

• Internal Zener/650V BVdss

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III HF version provides fast recovery for improved efficiency in high speed switching applications.