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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

NVH4L050N65S3FSUPERFET III MOSFET, 650V, 50mohm	FETs, MOSFETs	1	Active	SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability
NVH4L060N090SC1Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mohm, 900 V, M2, TO247−4L	Discrete Semiconductor Products	2	Active	EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NVH4L070N120M3SSilicon Carbide (SiC) MOSFET- EliteSiC, 65 mohm, 1200 V, M3S, TO247-4L	FETs, MOSFETs	1	Active	EliteSiC MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
NVH4L080N120SC1Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L	Single FETs, MOSFETs	1	Active	EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NVH4L095N065SC1Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 70 mohm, 650V, M2, TO247−4L	Discrete Semiconductor Products	1	Active	EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NVH4L110N65S3FSUPERFET III MOSFET, 650V, 110mohm	Transistors	1	Active	SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability
NVH4L160N120SC1Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L	FETs, MOSFETs	1	Active	EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NVH640S75L4SPBVE-Trac Direct - Automotive 750V, 640A Single Side Direct Cooling 6-Pack Power Module	Transistors	1	Active	The NVH640S75L4SPB is a power module from the VE-Trac™ Direct family of highly integrated power modules with industry-standard footprints for Hybrid and Electric Vehicle (HEV) traction inverter application.The module integrates six Field Stop 4 (FS4) 750V Narrow Mesa IGBTs in a 6-pack configuration. FS4 IGBTs show low power losses during lighter loads, which helps to improve overall system efficiency in automotive applications. For assembly ease and reliability, a new generation of press-fit pins is integrated into the power module signal terminals.
NVH640S75L4SPCVE-Trac Direct - Automotive 750V, 640A Single Side Direct Cooling 6-Pack Power Module	Discrete Semiconductor Products	1	Active	The NVH640S75L4SPC is a power module from the VE-Trac™ Direct family of highly integrated power modules with industry-standard footprints for Hybrid and Electric Vehicle (HEV) traction inverter application.The module integrates six Field Stop 4 (FS4) 750V Narrow Mesa IGBTs in a 6-pack configuration. FS4 IGBTs show low power losses during lighter loads, which helps to improve overall system efficiency in automotive applications. For assembly ease and reliability, a new generation of press-fit pins is integrated into the power module signal terminals.
NVH660S75L4SPFCVE-Trac Direct - Single Side Cooling 6-Pack Power Module with Flat Baseplate for Automotive 750V, 660A	IGBTs	1	Active	The NVH660S75L4SPFC is a power module from the VE-Trac™ Direct family of highly integrated power modules with industry-standard footprints for Hybrid and Electric Vehicle (HEV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750V Narrow Mesa IGBTs in a 6-pack configuration. FS4 IGBTs show low power losses during lighter loads, which helps to improve overall system efficiency in automotive applications. For assembly ease and reliability, a new generation of press-fit pins is integrated into the power module signal terminals.