NVHL070N120M3S Series

Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

Catalog

Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NVHL070N120M3S	TO-247-3	1230 pF	-55 °C	175 ░C	AEC-Q101	TO-247-3	4.4 V	57 nC	Automotive	N-Channel	18 V	87 mOhm	1200 V	-10 V	22 V	Through Hole	34 A

Catalog

Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

Key Features

• Typical RDS(on) = 65mΩ at Vgs =18V, Id = 15A

• Qualified for Automotive According to AEC−Q101

• New M3S technology: 65mohm RDS(ON) with low EON and EOFF losses

• Devices are Pb−Free and are RoHS Compliant

• 15V to 18V Gate Drive

Description

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.