NVJD4152P Series

Dual P−Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mΩ

Catalog

Dual P−Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mΩ

Part	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Technology	Supplier Device Package	Qualification	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
ON Semiconductor NVJD4152PT1G	Surface Mount	1.2 V	-55 °C	150 °C	Automotive	MOSFET (Metal Oxide)	SC-88 SC70-6 SOT-363	AEC-Q101	6-TSSOP SC-88 SOT-363	260 mOhm	2.2 nC	272 mW	2 P-Channel	155 pF	880 mA	20 V

Catalog

Dual P−Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mΩ

Key Features

• Leading Trench Technology for Low RDS(ON)Performance

• Small Footprint Package (SC70−6 Equivalent)

• ESD Protected Gate

• AEC−Q101 Qualified and PPAP Capable

Description

Automotive Power MOSFET ideal for low power applications. 20V, 260 mΩ, Dual P-channel MOSFET with ESD protection in SC-88 package. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.