NVHL072N65S3 Series

Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 44 A, 72 mΩ, TO-247

Catalog

Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 44 A, 72 mΩ, TO-247

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Grade	Rds On (Max) @ Id, Vgs [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Qualification	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)
ON Semiconductor NVHL072N65S3	312 W	82 nC	TO-247-3	4.5 V	10 V	Automotive	72 mOhm	N-Channel	MOSFET (Metal Oxide)	650 V	AEC-Q101	44 A	-55 °C	150 °C	TO-247-3	Through Hole	3300 pF	30 V

Catalog

Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 44 A, 72 mΩ, TO-247

Key Features

• Best in Class body diode

• Internal Rg

• Lower RDS (ON) maxX QG typ& RDS (ON) maxX EOSS

• Low RDS(ON)/ Same Packages

• Internal Zener / 650V BVdss

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.