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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

NVH820S75L4SPCVE-Trac Direct - Single Side Direct Cooling Three-Phase 6-Pack Power Module for Automotive, 750V, 820A, Long Tabs	IGBTs	1	Active	The NVH820S75L4SPC is a power module from the VE-Trac™ Direct family of highly integrated power modules with industry-standard footprints for Hybrid and Electric Vehicle (HEV) traction inverter application.The module integrates six Field Stop 4 (FS4) 750V Narrow Mesa IGBTs in a 6-pack configuration. FS4 IGBTs show low power losses during lighter loads, which helps to improve overall system efficiency in automotive applications. For assembly ease and reliability, a new generation of press-fit pins is integrated into the power module signal terminals.
NVH950S75L4SPBVE-Trac Direct: High Performance Single Side Direct Cooling Three-Phase 6-Pack Power Module for Automotive, 750V, 950A, Short Tabs	Transistors	1	Active	The NVH950S75L4SPB is a power module from the VE-Trac™ Direct family of highly integrated power modules with industry-standard footprints for Hybrid and Electric Vehicle (HEV) traction inverter application.The module integrates six Field Stop 4 (FS4) 750V Narrow Mesa IGBTs in a 6-pack configuration. FS4 IGBTs show low power losses during lighter loads, which helps to improve overall system efficiency in automotive applications. Ultra-High Performance DBCs further lower thermal resistance and enables higher current load during peak operating conditions compared to 820A rated power modules. For assembly ease and reliability, a new generation of press-fit pins is integrated into the power module signal terminals.
NVHL015N065SC1Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−3L	Single FETs, MOSFETs	1	Active	EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NVHL025N065SC1Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 25mohm, 650V, M2, TO247-3L	Discrete Semiconductor Products	1	Active	EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NVHL025N65S3Single N-Channel Power MOSFET SUPERFET<sup>®</sup> III, Easy Drive, 650 V , 75 A, 25 mΩ, TO-247	FETs, MOSFETs	1	Active	SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
NVHL027N65S3FSingle N-Channel Power MOSFET SUPERFET<sup>®</sup> III, FRFET®, 650 V , 75 A, 27.4 mΩ, TO-247	Transistors	1	Active	SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
NVHL040N120SC1Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−3L	Discrete Semiconductor Products	1	Active	EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NVHL040N65S3MOSFET – Power, N-Channel, SUPERFET® III,Automotive, Easy-Drive 650 V, 65 A, 40 mΩ	FETs, MOSFETs	1	Active	SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability
NVHL045N065SC1Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 32 mohm, 650 V, M2, TO247−3L	Discrete Semiconductor Products	1	Active	EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NVHL060N065SC1Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60mohm, 650 V, M2, TO247-3L	Transistors	1	Active	EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.