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Nexperia USA Inc.

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(5568)

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Part	Category	Description
Nexperia USA Inc. PBSS4350X-QZ	Discrete Semiconductor Products	TRANSISTOR GP BJT NPN 50V 3A 3-PIN SOT-89 T/R
Nexperia USA Inc. PDTD143XT-QR	Discrete Semiconductor Products	PDTD143XT-Q/SOT23/TO-236AB
Nexperia USA Inc. BAV99/DG/B3,235Obsolete	Discrete Semiconductor Products	DIODE ARRAY GEN PURP 100V 215MA
Nexperia USA Inc. 74HCS21PW-Q100J	Integrated Circuits (ICs)	74HCS21PW-Q100/SOT402/TSSOP14
Nexperia USA Inc. PMCB60XNEAYL	Discrete Semiconductor Products	SMALL SIGNAL MOSFET FOR MOBILE
Nexperia USA Inc. LD6836TD/13P,125Obsolete	Integrated Circuits (ICs)	IC REG LINEAR 1.3V 300MA 5-TSOP
Nexperia USA Inc. 74HC688PW,112Obsolete	Integrated Circuits (ICs)	IC ID COMPARATOR 8BIT 20-TSSOP
Nexperia USA Inc. PDZ6.2B-QZ	Discrete Semiconductor Products	DIODE ZENER 6.2V 400MW SOD323
Nexperia USA Inc. BUK4D38-20PH	Discrete Semiconductor Products	SMALL SIGNAL MOSFETS FOR AUTOMOT
Nexperia USA Inc. 74ALVT16373DGG,512Obsolete	Integrated Circuits (ICs)	IC D-TYPE TRANSP 8:8 48-TSSOP

Series	Category	# Parts	Status	Description

PSMN1R0-100ASFNextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package	FETs, MOSFETs	1	Active	NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications.
PSMN1R0-100CSFNextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package	Transistors	1	Active	NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications.
PSMN1R0-30YLCN-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology	Transistors	1	Active	Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
PSMN1R0-30YLEN-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56	FETs, MOSFETs	1	Active	N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.
PSMN1R0-40SSHN-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology	Discrete Semiconductor Products	1	Active	325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current.
PSMN1R0-40YLDN-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology	Single FETs, MOSFETs	1	Active	280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
PSMN1R0-40YSHN-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology	Transistors	1	Active	290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
PSMN1R0-80CSEN-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package	Discrete Semiconductor Products	1	Active	N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R0-80CSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212i).
PSMN1R1N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology	Discrete Semiconductor Products	3	Active	Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
PSMN1R1-100CSEN-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package	FETs, MOSFETs	1	Active	N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R1-100CSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212i).