PSMN1R1 Series

Catalog

MOSFET N-CH 30V 120A TO220AB

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP PSMN1R1-30PL,127	TO-220AB	1.3 mOhm	4.5 V 10 V	20 V	243 nC	Through Hole	338 W	-55 °C	175 ░C	2.2 V	120 A	MOSFET (Metal Oxide)	N-Channel	14850 pF	TO-220-3	30 V
Freescale Semiconductor - NXP PSMN1R1-25YLC,115	LFPAK56 Power-SO8	1.15 mOhm	4.5 V 10 V	20 V	83 nC	Surface Mount	215 W	-55 °C	175 ░C		100 A	MOSFET (Metal Oxide)	N-Channel	5287 pF	SC-100 SOT-669	25 V