PSMN1R0-30YLE Series

N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Catalog

N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Part	Mounting Type	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMN1R0-30YLEX	Surface Mount	20 V	SC-100 SOT-669	7389 pF	MOSFET (Metal Oxide)	119 nC	224 W	2.2 V	30 V	LFPAK56 Power-SO8	N-Channel	1.11 mOhm	175 °C	-55 °C	275 A	7 V 10 V

Catalog

N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Description

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.