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Nexperia USA Inc.
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 Nexperia USA Inc. | Discrete Semiconductor Products | TRANSISTOR GP BJT NPN 50V 3A 3-PIN SOT-89 T/R |
Nexperia USA Inc. | Discrete Semiconductor Products | PDTD143XT-Q/SOT23/TO-236AB |
Nexperia USA Inc. BAV99/DG/B3,235Obsolete | Discrete Semiconductor Products | DIODE ARRAY GEN PURP 100V 215MA |
 Nexperia USA Inc. | Integrated Circuits (ICs) | 74HCS21PW-Q100/SOT402/TSSOP14 |
 Nexperia USA Inc. | Discrete Semiconductor Products | SMALL SIGNAL MOSFET FOR MOBILE |
 Nexperia USA Inc. LD6836TD/13P,125Obsolete | Integrated Circuits (ICs) | IC REG LINEAR 1.3V 300MA 5-TSOP |
 Nexperia USA Inc. 74HC688PW,112Obsolete | Integrated Circuits (ICs) | IC ID COMPARATOR 8BIT 20-TSSOP |
 Nexperia USA Inc. | Discrete Semiconductor Products | DIODE ZENER 6.2V 400MW SOD323 |
 Nexperia USA Inc. | Discrete Semiconductor Products | SMALL SIGNAL MOSFETS FOR AUTOMOT |
 Nexperia USA Inc. 74ALVT16373DGG,512Obsolete | Integrated Circuits (ICs) | IC D-TYPE TRANSP 8:8 48-TSSOP |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
PSMN069N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET | Transistors | 1 | Active | Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN071-100NSEN-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement | Single FETs, MOSFETs | 1 | Active | New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90 W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of "soft-start", thermal management and power density requirements. These ASFETs combine enhanced SOA in a compact 2 mm x 2 mm footprint making them ideally placed for a variety of applications including PoE, eFuse and relay replacement. |
| FETs, MOSFETs | 1 | Active | ||
| Transistors | 1 | Active | ||
PSMN0R9N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 | FETs, MOSFETs | 3 | Active | SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications. |
PSMN0R9-30YLDN-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Discrete Semiconductor Products | 1 | Active | 300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. |
PSMN1N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Discrete Semiconductor Products | 2 | Active | N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. |
PSMN102N-channel TrenchMOS SiliconMAX standard level FET | Transistors | 1 | Active | SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. |
PSMN1R0N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 | FETs, MOSFETs | 3 | Active | SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications. |
PSMN1R0-100ASEN-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Transistors | 1 | Active | N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R0-100ASE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212). |
