PSMN1R1-40BSN-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK | FETs, MOSFETs | 1 | Active | Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN1R1-80ASFNextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package | Transistors | 1 | Active | NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. |
PSMN1R1-80CSFNextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package | Transistors | 1 | Active | NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. |
PSMN1R2N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Single FETs, MOSFETs | 5 | Active | Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. |
PSMN1R2-55SLHN-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 | Discrete Semiconductor Products | 1 | Active | 330 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe and reliable switching at high load-current. |
PSMN1R2-80ASEN-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Single FETs, MOSFETs | 1 | Active | N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80ASE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212). |
PSMN1R2-80CSEN-channel, 80 V, 1.3 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | FETs, MOSFETs | 1 | Active | N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80CSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212i). |
| FETs, MOSFETs | 1 | Active | |
PSMN1R3-100ASFNextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package | FETs, MOSFETs | 1 | Active | NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. |
PSMN1R3-80SSFNextPower 80 V, 1.2 mOhm, 335 Amp, N-channel MOSFET in LFPAK88 package | Discrete Semiconductor Products | 1 | Active | NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. |
