PSMN1R0-40YLD Series

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Catalog

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Part	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs
Nexperia USA Inc. PSMN1R0-40YLDX	N-Channel	LFPAK56 Power-SO8	127 nC	20 V	8845 pF	4.5 V 10 V	198 W	Surface Mount	280 A	40 V	MOSFET (Metal Oxide)	150 °C	-55 °C	2.2 V	SC-100 SOT-669	1.1 mOhm

Catalog

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Description

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.