PSMN1R4N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Single FETs, MOSFETs | 1 | Active | Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. |
PSMN1R4-100ASEN-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | FETs, MOSFETs | 1 | Active | N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100ASE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212). |
PSMN1R4-100CSEN-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | FETs, MOSFETs | 1 | Active | N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100CSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212). |
PSMN1R4-100CSFNextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package | Discrete Semiconductor Products | 1 | Active | NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. |
PSMN1R4-40YLDN-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology | Transistors | 1 | Active | 240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. |
PSMN1R4-40YSHN-channel 40 V, 1.4 mOhm, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Discrete Semiconductor Products | 1 | Obsolete | 240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. |
PSMN1R5N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology | Single | 6 | Active | Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN1R5-40YSDN-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Single FETs, MOSFETs | 1 | Active | 240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. |
PSMN1R5-50YLHN-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E | Transistors | 1 | Active | 200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe and reliable switching at high load-current. |
| Single FETs, MOSFETs | 1 | Active | |
