PSMN1R0-40YSH Series

N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

Catalog

N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Rds On (Max) @ Id, Vgs	Vgs (Max)
Nexperia USA Inc. PSMN1R0-40YSHX	9433 pF	333 W	40 V	175 °C	-55 °C	Surface Mount	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	SOT-1023 4-LFPAK	10 V	290 A	N-Channel	3.6 V	122 nC	Schottky Diode (Body)	1 mOhm	20 V

Catalog

N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology

Description

290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.