PSMN038N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Single FETs, MOSFETs | 2 | Active | Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
| Transistors | 1 | Active | |
PSMN040-100MSEN-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications | Single FETs, MOSFETs | 1 | Active | New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of "soft-start", thermal management and power density requirements. |
PSMN041N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 | Single FETs, MOSFETs | 1 | Active | Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
| Transistors | 1 | Active | |
PSMN045-80YSN-channel LFPAK 80 V 45 mΩ standard level MOSFET | Transistors | 1 | Active | Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN047-100NSEN-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement | Discrete Semiconductor Products | 1 | Active | New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90 W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of "soft-start", thermal management and power density requirements. These ASFETs combine enhanced SOA in a compact 2 mm x 2 mm footprint making them ideally placed for a variety of applications including PoE, eFuse and relay replacement. |
| Single | 2 | Active | |
PSMN059-150YN-channel TrenchMOS SiliconMAX standard level FET | Transistors | 1 | Active | SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. |
| Single FETs, MOSFETs | 1 | Obsolete | |
