Texas Instruments

DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents. The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout. DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents. The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

The DRV8301-Q1 device is an automotive gate driver IC for three phase motor drive applications. The device provides three half bridge drivers, each capable of driving two N-type MOSFETs, one for the high-side and one for the low side. The device supports up to 2.3-A sink and 1.7-A source peak current capability and only needs a single power supply with a wide range from 6 to 60 V. The DRV8301-Q1 device uses bootstrap gate drivers with trickle charge circuitry to support 100% duty cycle. The gate driver uses automatic hand shaking when high-side FET or low-side FET is switching to prevent current shoot through. VDSof FETs is sensed to protect external power stage during overcurrent conditions. The DRV8301-Q1 device includes two current shunt amplifiers for accurate current measurement. The current amplifiers support bi-directional current sensing and provide an adjustable output offset of up to 3 V. The DRV8301-Q1 device also has an integrated switching mode buck converter with adjustable output and switching frequency to support MCU or additional system power needs. The buck is capable to drive up to 1.5-A load. The SPI interface provides detailed fault reporting and flexible parameter settings such as gain options for current shunt amplifier, slew rate control of gate driver, and other settings. The DRV8301-Q1 device is an automotive gate driver IC for three phase motor drive applications. The device provides three half bridge drivers, each capable of driving two N-type MOSFETs, one for the high-side and one for the low side. The device supports up to 2.3-A sink and 1.7-A source peak current capability and only needs a single power supply with a wide range from 6 to 60 V. The DRV8301-Q1 device uses bootstrap gate drivers with trickle charge circuitry to support 100% duty cycle. The gate driver uses automatic hand shaking when high-side FET or low-side FET is switching to prevent current shoot through. VDSof FETs is sensed to protect external power stage during overcurrent conditions. The DRV8301-Q1 device includes two current shunt amplifiers for accurate current measurement. The current amplifiers support bi-directional current sensing and provide an adjustable output offset of up to 3 V. The DRV8301-Q1 device also has an integrated switching mode buck converter with adjustable output and switching frequency to support MCU or additional system power needs. The buck is capable to drive up to 1.5-A load. The SPI interface provides detailed fault reporting and flexible parameter settings such as gain options for current shunt amplifier, slew rate control of gate driver, and other settings.

The DRV8303 is a gate driver IC for three-phase motor-drive applications. The device provides three half bridge drivers, each capable of driving two N-channel MOSFETs. The device supports up to 1.7-A source and 2.3-A peak current capability. The DRV8303 can operate off of a single power supply with a wide range from 6-V to 60-V. It uses a bootstrap gate-driver architecture with trickle charge circuitry to support 100% duty cycle. The DRV8303 uses automatic hand shaking when the high-side or low-side MOSFET is switching to prevent current shoot through. Integrated VDS sensing of the high-side and low-side MOSFETs is used to protect the external power stage against overcurrent conditions. The DRV8303 includes two current-shunt amplifiers for accurate current measurement. The amplifiers support bi-directional current sensing and provide and adjustable output offset up to 3 V. The serial peripheral interface (SPI) provides detailed fault reporting and flexible parameter settings such as gain options for the current-shunt amplifiers and slew-rate control of the gate drivers. The DRV8303 is a gate driver IC for three-phase motor-drive applications. The device provides three half bridge drivers, each capable of driving two N-channel MOSFETs. The device supports up to 1.7-A source and 2.3-A peak current capability. The DRV8303 can operate off of a single power supply with a wide range from 6-V to 60-V. It uses a bootstrap gate-driver architecture with trickle charge circuitry to support 100% duty cycle. The DRV8303 uses automatic hand shaking when the high-side or low-side MOSFET is switching to prevent current shoot through. Integrated VDS sensing of the high-side and low-side MOSFETs is used to protect the external power stage against overcurrent conditions. The DRV8303 includes two current-shunt amplifiers for accurate current measurement. The amplifiers support bi-directional current sensing and provide and adjustable output offset up to 3 V. The serial peripheral interface (SPI) provides detailed fault reporting and flexible parameter settings such as gain options for the current-shunt amplifiers and slew-rate control of the gate drivers.

The DRV8304 device is an integrated gate driver for 3-phase brushless DC (BLDC) motors applications for 12-V and 24-V DC rails. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device integrates three current-sense amplifiers (CSA) for sensing the phase currents of BLDC motors for optimum FOC and current-control system implementation. An AUTOCAL feature automatically calibrates the CSA offset error for accurate current sensing. The device is based on smart gate-drive (SGD) architecture to eliminate the need of any external gate components (resistors and Zener diodes) while fully protecting the external FETs. The SGD architecture optimizes dead time to avoid any shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by gate slew-rate control, and protects against any gate-short conditions through VGShand-shaking and dead time insertion. Strong pulldown current also prevents any dv/dt gate turnon. Various PWM control modes (1x, 3x, 6x, and independent) are supported for simple interfacing to control circuits that can be powered by the 30-mA, 3.3-V internal regulator. These modes decrease the number of output peripherals of the controller for the specific motor-control requirements and provide flexibility of control. The device also has a 1x mode for sensored trapezoidal control of the BLDC motor by using the internal block-commutation table. The device can also be configured to drive multiple loads, such as solenoids, in independent mode. The DRV8304 device is an integrated gate driver for 3-phase brushless DC (BLDC) motors applications for 12-V and 24-V DC rails. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device integrates three current-sense amplifiers (CSA) for sensing the phase currents of BLDC motors for optimum FOC and current-control system implementation. An AUTOCAL feature automatically calibrates the CSA offset error for accurate current sensing. The device is based on smart gate-drive (SGD) architecture to eliminate the need of any external gate components (resistors and Zener diodes) while fully protecting the external FETs. The SGD architecture optimizes dead time to avoid any shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by gate slew-rate control, and protects against any gate-short conditions through VGShand-shaking and dead time insertion. Strong pulldown current also prevents any dv/dt gate turnon. Various PWM control modes (1x, 3x, 6x, and independent) are supported for simple interfacing to control circuits that can be powered by the 30-mA, 3.3-V internal regulator. These modes decrease the number of output peripherals of the controller for the specific motor-control requirements and provide flexibility of control. The device also has a 1x mode for sensored trapezoidal control of the BLDC motor by using the internal block-commutation table. The device can also be configured to drive multiple loads, such as solenoids, in independent mode.

The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V. The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference. The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents. The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDSof both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control. Device Options: The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V. The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference. The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents. The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDSof both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control. Device Options:

The DRV8306 device is an integrated gate driver for 3-phase brushless DC (BLDC) motor applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8306 device generates the proper gate drive voltages using an integrated charge pump for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The smart gate drive architecture supports up to 150-mA source and 300-mA sink peak gate drive current and 15-mA rms gate drive current capability. The device provides an internal 120° commutation for the trapezoidal BLDC motor. The DRV8306 device has three Hall comparators which use the input from the Hall elements for internal commutation. The duty cycle ratio of the phase voltage of the motor can be adjusted through the PWM pin. Additional brake (nBRAKE) and direction (DIR) pins are provided for braking and setting the direction of the BLDC motor. A 3.3-V, 30-mA low-dropout (LDO) regulator is provided to supply the external controller and Hall elements. An additional FGOUT signal is provided which is a measure of the commutation frequency. This signal can be used for implementing the closed-loop control of BLDC motor. A low-power sleep mode is provided to achieve low quiescent current draw by shutting down most of the internal circuitry. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin. The DRV8306 device is an integrated gate driver for 3-phase brushless DC (BLDC) motor applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8306 device generates the proper gate drive voltages using an integrated charge pump for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The smart gate drive architecture supports up to 150-mA source and 300-mA sink peak gate drive current and 15-mA rms gate drive current capability. The device provides an internal 120° commutation for the trapezoidal BLDC motor. The DRV8306 device has three Hall comparators which use the input from the Hall elements for internal commutation. The duty cycle ratio of the phase voltage of the motor can be adjusted through the PWM pin. Additional brake (nBRAKE) and direction (DIR) pins are provided for braking and setting the direction of the BLDC motor. A 3.3-V, 30-mA low-dropout (LDO) regulator is provided to supply the external controller and Hall elements. An additional FGOUT signal is provided which is a measure of the commutation frequency. This signal can be used for implementing the closed-loop control of BLDC motor. A low-power sleep mode is provided to achieve low quiescent current draw by shutting down most of the internal circuitry. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin.

The DRV8307 is a three half-bridge pre-driver that drives six N-type MOSFETs 30 mA with a single power supply. Aimed at sensored three-phase brushless DC motors, the DRV8307 is driven by a single PWM input and supports integrated commutation logic with three Hall sensor inputs. A separate 5-V regulator is also included to be used to power Hall-effect sensors and other external components. The DRV8307 includes a current sense input for current limiting and protection. The current limit can be set by adjusting the value of the RISENSEsense resistor. Motor operation (start and stop) is controlled through the ENABLEn terminal. If the ENABLEn terminal is set high and motor rotation has stopped, the device enters into a low-power standby state, thereby conserving overall system power during periods of inactivity. Protection features are also included in the DRV8307 device such as locked rotor detection, as well as overcurrent and overtemperature protection and undervoltage lockout to bolster overall system robustness and reliability. The DRV8307 is a three half-bridge pre-driver that drives six N-type MOSFETs 30 mA with a single power supply. Aimed at sensored three-phase brushless DC motors, the DRV8307 is driven by a single PWM input and supports integrated commutation logic with three Hall sensor inputs. A separate 5-V regulator is also included to be used to power Hall-effect sensors and other external components. The DRV8307 includes a current sense input for current limiting and protection. The current limit can be set by adjusting the value of the RISENSEsense resistor. Motor operation (start and stop) is controlled through the ENABLEn terminal. If the ENABLEn terminal is set high and motor rotation has stopped, the device enters into a low-power standby state, thereby conserving overall system power during periods of inactivity. Protection features are also included in the DRV8307 device such as locked rotor detection, as well as overcurrent and overtemperature protection and undervoltage lockout to bolster overall system robustness and reliability.

The DRV8308 controls sensored brushless DC motors with advanced features and a simple input interface. As a predriver, it drives the gates of 6 external N-Channel MOSFETs with a configurable current of 10mA to 130mA for optimal switching characteristics. The 3 motor phases are commutated according to the Hall sensor inputs. Once the motor reaches a consistent speed, the DRV8308 uses just 1 Hall sensor to minimize jitter caused by sensor mismatch. The Hall signal-to-drive timing can be advanced or delayed in 0.1% increments to optimize power efficiency. An optional 180° commutation mode drives sinusoidal current through the motor and minimizes audible noise and torque ripple. Peak motor current can be controlled by sizing a sense resistor. The DRV8308 achieves closed-loop speed control to spin motors to a precise RPM across a wide range of load torques. The system matches motor speed—generated from an FG trace or the Hall sensors—to the reference frequency on pin CLKIN. The DRV8308 can also drive motors open-loop using a duty cycle command, from either a clock or register setting. An assortment of protection features bolster system robustness, as the DRV8308 handles and reports overcurrent, overvoltage, undervoltage, and overtemperature. The DRV8308 controls sensored brushless DC motors with advanced features and a simple input interface. As a predriver, it drives the gates of 6 external N-Channel MOSFETs with a configurable current of 10mA to 130mA for optimal switching characteristics. The 3 motor phases are commutated according to the Hall sensor inputs. Once the motor reaches a consistent speed, the DRV8308 uses just 1 Hall sensor to minimize jitter caused by sensor mismatch. The Hall signal-to-drive timing can be advanced or delayed in 0.1% increments to optimize power efficiency. An optional 180° commutation mode drives sinusoidal current through the motor and minimizes audible noise and torque ripple. Peak motor current can be controlled by sizing a sense resistor. The DRV8308 achieves closed-loop speed control to spin motors to a precise RPM across a wide range of load torques. The system matches motor speed—generated from an FG trace or the Hall sensors—to the reference frequency on pin CLKIN. The DRV8308 can also drive motors open-loop using a duty cycle command, from either a clock or register setting. An assortment of protection features bolster system robustness, as the DRV8308 handles and reports overcurrent, overvoltage, undervoltage, and overtemperature.

The DRV8311 provides three integrated MOSFET half-H-bridges for driving a three-phase brushless DC (BLDC) motor for 5-V, 9-V, 12-V, or 18-V DC rails or 1S to 4S battery powered applications. The device integrates three current-sense amplifiers (CSA) with integrated current sense for sensing the three phase currents of BLDC motors to achieve optimum FOC and current-control system implementation. The DRV8311P device provides capability to generate and configure PWM timers over Texas Instruments SPI (tSPI), and allows the control of multiple BLDC motors directly over the tSPI interface. This feature reduces the number of required I/O ports from the primary controller to control multiple motors. The DRV8311 provides three integrated MOSFET half-H-bridges for driving a three-phase brushless DC (BLDC) motor for 5-V, 9-V, 12-V, or 18-V DC rails or 1S to 4S battery powered applications. The device integrates three current-sense amplifiers (CSA) with integrated current sense for sensing the three phase currents of BLDC motors to achieve optimum FOC and current-control system implementation. The DRV8311P device provides capability to generate and configure PWM timers over Texas Instruments SPI (tSPI), and allows the control of multiple BLDC motors directly over the tSPI interface. This feature reduces the number of required I/O ports from the primary controller to control multiple motors.