DRV8306 Series

40-V max sensored trapezoidal control, 3-phase BLDC smart gate driver

Catalog

40-V max sensored trapezoidal control, 3-phase BLDC smart gate driver

Part	Voltage - Supply [Max]	Voltage - Supply [Min]	Technology	Current - Output	Mounting Type	Motor Type - Stepper	Voltage - Load [Max]	Voltage - Load [Min]	Output Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Applications	Motor Type - AC, DC	Package / Case	Interface [custom]	Interface [custom]	Supplier Device Package	Function	Type	Supplied Contents	Utilized IC / Part
Texas Instruments DRV8306HRSMT	38 V	6 V	Power MOSFET	300 mA	Surface Mount	Multiphase	5.5 V	0 V	Half Bridge (3)	-40 °C	125 °C	General Purpose	Brushless DC (BLDC)	32-VFQFN Exposed Pad	HW	Hardwired	32-VQFN (4x4)	Controller - Commutation Direction Management
Texas Instruments DRV8306EVM																		Motor Controller/Driver	Power Management	Board(s)	DRV8306

Catalog

40-V max sensored trapezoidal control, 3-phase BLDC smart gate driver

Key Features

• 6-V to 38-V, Triple Half-Bridge Gate Driver With Integrated 3x Hall Comparators40-V Absolute Maximum RatingFully Optimized for 12-V and 24-V DC RailsDrives High-Side and Low-Side N-Channel MOSFETsSupports 100% PWM Duty CycleSmart Gate Drive ArchitectureAdjustable Slew-Rate Control for Better EMI and EMC PerformanceVGSHand-Shake and Minimum Dead-Time Insertion to Avoid Shoot-Through15-mA to 150-mA Peak Source Current30-mA to 300-mA Peak Sink CurrentIntegrated Commutation from Hall Sensors120° Trapezoidal Current ControlSupports Low-Cost Hall ElementsTacho Output Signal (FGOUT) for Closed Loop Speed ControlIntegrated Gate Driver Power SuppliesHigh-Side Charge PumpLow-Side Linear RegulatorCycle-by-Cycle Current LimitSupports 1.8-V, 3.3-V, and 5-V Logic InputsLow-Power Sleep ModeLinear Voltage Regulator, 3.3 V, 30 mACompact VQFN Package and FootprintIntegrated Protection FeaturesVM Undervoltage Lockout (UVLO)Charge Pump Undervoltage (CPUV)MOSFET Overcurrent Protection (OCP)Gate Driver Fault (GDF)Thermal Shutdown (OTSD)Fault Condition Indicator (nFAULT)6-V to 38-V, Triple Half-Bridge Gate Driver With Integrated 3x Hall Comparators40-V Absolute Maximum RatingFully Optimized for 12-V and 24-V DC RailsDrives High-Side and Low-Side N-Channel MOSFETsSupports 100% PWM Duty CycleSmart Gate Drive ArchitectureAdjustable Slew-Rate Control for Better EMI and EMC PerformanceVGSHand-Shake and Minimum Dead-Time Insertion to Avoid Shoot-Through15-mA to 150-mA Peak Source Current30-mA to 300-mA Peak Sink CurrentIntegrated Commutation from Hall Sensors120° Trapezoidal Current ControlSupports Low-Cost Hall ElementsTacho Output Signal (FGOUT) for Closed Loop Speed ControlIntegrated Gate Driver Power SuppliesHigh-Side Charge PumpLow-Side Linear RegulatorCycle-by-Cycle Current LimitSupports 1.8-V, 3.3-V, and 5-V Logic InputsLow-Power Sleep ModeLinear Voltage Regulator, 3.3 V, 30 mACompact VQFN Package and FootprintIntegrated Protection FeaturesVM Undervoltage Lockout (UVLO)Charge Pump Undervoltage (CPUV)MOSFET Overcurrent Protection (OCP)Gate Driver Fault (GDF)Thermal Shutdown (OTSD)Fault Condition Indicator (nFAULT)

Description

The DRV8306 device is an integrated gate driver for 3-phase brushless DC (BLDC) motor applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8306 device generates the proper gate drive voltages using an integrated charge pump for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The smart gate drive architecture supports up to 150-mA source and 300-mA sink peak gate drive current and 15-mA rms gate drive current capability. The device provides an internal 120° commutation for the trapezoidal BLDC motor. The DRV8306 device has three Hall comparators which use the input from the Hall elements for internal commutation. The duty cycle ratio of the phase voltage of the motor can be adjusted through the PWM pin. Additional brake (nBRAKE) and direction (DIR) pins are provided for braking and setting the direction of the BLDC motor. A 3.3-V, 30-mA low-dropout (LDO) regulator is provided to supply the external controller and Hall elements. An additional FGOUT signal is provided which is a measure of the commutation frequency. This signal can be used for implementing the closed-loop control of BLDC motor. A low-power sleep mode is provided to achieve low quiescent current draw by shutting down most of the internal circuitry. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin. The DRV8306 device is an integrated gate driver for 3-phase brushless DC (BLDC) motor applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8306 device generates the proper gate drive voltages using an integrated charge pump for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The smart gate drive architecture supports up to 150-mA source and 300-mA sink peak gate drive current and 15-mA rms gate drive current capability. The device provides an internal 120° commutation for the trapezoidal BLDC motor. The DRV8306 device has three Hall comparators which use the input from the Hall elements for internal commutation. The duty cycle ratio of the phase voltage of the motor can be adjusted through the PWM pin. Additional brake (nBRAKE) and direction (DIR) pins are provided for braking and setting the direction of the BLDC motor. A 3.3-V, 30-mA low-dropout (LDO) regulator is provided to supply the external controller and Hall elements. An additional FGOUT signal is provided which is a measure of the commutation frequency. This signal can be used for implementing the closed-loop control of BLDC motor. A low-power sleep mode is provided to achieve low quiescent current draw by shutting down most of the internal circuitry. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin.