DRV8300-Q1 Series

Automotive 100-V max simple 3-phase gate driver with bootstrap diodes

Catalog

Automotive 100-V max simple 3-phase gate driver with bootstrap diodes

Part	Package / Case [y]	Package / Case	Package / Case [x]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Channel Type	Rise / Fall Time (Typ)	Rise / Fall Time (Typ)	Input Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Logic Voltage - VIL, VIH	Gate Type	Grade	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Qualification
Texas Instruments DRV8300NIPWR	4.4 mm	20-TSSOP	0.173 in	1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	20-TSSOP	3-Phase	12 ns	12 ns	Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3	0.8 V 2 V	N-Channel MOSFET
Texas Instruments DRV8300DRGER		24-VFQFN Exposed Pad		1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	24-VQFN (4x4)	3-Phase	12 ns	12 ns	Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3	0.8 V 2 V	N-Channel MOSFET
Texas Instruments DRV8300DIPWR	4.4 mm	20-TSSOP	0.173 in	1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	20-TSSOP	3-Phase	12 ns	12 ns	Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3	0.8 V 2 V	N-Channel MOSFET
Texas Instruments DRV8300NPWR	4.4 mm	20-TSSOP	0.173 in	1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	20-TSSOP	3-Phase	12 ns	12 ns	Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3	0.8 V 2 V	MOSFET (N-Channel)
Texas Instruments DRV8300DPWRQ1	4.4 mm	20-TSSOP	0.173 in	1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	20-TSSOP	3-Phase			Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3		N-Channel MOSFET	Automotive	24 ns	12 ns	AEC-Q100
Texas Instruments DRV8300NRGER		24-VFQFN Exposed Pad		1.5 A	750 mA	High-Side and Low-Side	-40 °C	125 °C	24-VQFN (4x4)	3-Phase	12 ns	12 ns	Inverting Non-Inverting	5 V	20 V	Surface Mount	105 V	3	0.8 V 2 V	N-Channel MOSFET

Catalog

Automotive 100-V max simple 3-phase gate driver with bootstrap diodes

Key Features

• 100-V Three Phase Half-Bridge Gate driverDrives N-Channel MOSFETs (NMOS)Gate Driver Supply (GVDD): 5-20 VMOSFET supply (SHx) support upto 100 VIntegrated Bootstrap Diodes (DRV8300D devices)Supports Inverting and Non-Inverting INLx inputsBootstrap gate drive architecture750-mA source current1.5-A sink currentSupports up to 15S battery powered applicationsLow leakage current on SHx pins (<55 µA)Absolute maximum BSTx voltage upto 125-VSupports negative transients upto -22-V on SHxBuilt-in cross conduction preventionAdjustable deadtime through DT pin for QFN package variantsFixed deadtime insertion of 200 nS for TSSOP package variantsSupports 3.3-V and 5-V logic inputs with 20 V Abs max4 nS typical propogation delay matchingCompact QFN and TSSOP packagesEfficient system design withPower BlocksIntegrated protection featuresBST undervoltage lockout (BSTUV)GVDD undervoltage (GVDDUV)100-V Three Phase Half-Bridge Gate driverDrives N-Channel MOSFETs (NMOS)Gate Driver Supply (GVDD): 5-20 VMOSFET supply (SHx) support upto 100 VIntegrated Bootstrap Diodes (DRV8300D devices)Supports Inverting and Non-Inverting INLx inputsBootstrap gate drive architecture750-mA source current1.5-A sink currentSupports up to 15S battery powered applicationsLow leakage current on SHx pins (<55 µA)Absolute maximum BSTx voltage upto 125-VSupports negative transients upto -22-V on SHxBuilt-in cross conduction preventionAdjustable deadtime through DT pin for QFN package variantsFixed deadtime insertion of 200 nS for TSSOP package variantsSupports 3.3-V and 5-V logic inputs with 20 V Abs max4 nS typical propogation delay matchingCompact QFN and TSSOP packagesEfficient system design withPower BlocksIntegrated protection featuresBST undervoltage lockout (BSTUV)GVDD undervoltage (GVDDUV)

Description

DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents. The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout. DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents. The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.