Catalog
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET
Description
AI
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
Beta
⌘K
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET
1200V, 40A, THD, Silicon-carbide (SiC) MOSFET
| Part | Vgs (Max) [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Mounting Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | -6 V 22 V | 262 W | 18 V | TO-247-3 | 2080 pF | TO-247N | Through Hole | 4 V | 117 mOhm | 175 °C | 106 nC | N-Channel | 1.2 kV |