Catalog
1200V, 10A, THD, Silicon-carbide (SiC) MOSFET
Description
AI
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
Beta
⌘K
1200V, 10A, THD, Silicon-carbide (SiC) MOSFET
1200V, 10A, THD, Silicon-carbide (SiC) MOSFET
| Part | Mounting Type | Grade | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | FET Type | Supplier Device Package | Vgs(th) (Max) @ Id | Qualification | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Package / Case | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | Through Hole | Automotive | 463 pF | 585 mOhm | N-Channel | TO-247N | 4 V | AEC-Q101 | 1.2 kV | 27 nC | 175 °C | TO-247-3 | 85 W | 18 V | 10 A | -6 V 22 V |
 Rohm Semiconductor | Through Hole | 463 pF | 585 mOhm | N-Channel | TO-247N | 4 V | 1.2 kV | 27 nC | 175 °C | TO-247-3 | 85 W | 18 V | 10 A | -6 V 22 V |