SCT3017 Series

650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	FET Type	Mounting Type	Power Dissipation (Max) [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Grade	Qualification
Rohm Semiconductor SCT3017ALGC11	22.1 mOhm	172 nC	175 °C	N-Channel	Through Hole	427 W	TO-247N	650 V	2884 pF	TO-247-3	18 V	5.6 V	118 A
Rohm Semiconductor SCT3017ALHRC11	22.1 mOhm	172 nC	175 °C	N-Channel	Through Hole	427 W	TO-247N	650 V	2884 pF	TO-247-3	18 V	5.6 V	118 A	Automotive	AEC-Q101

Catalog

650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Description

AEC-Q101 qualified automotive grade product. SCT3017ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.