SCT2H12NWB Series

1700V, 3.9A, 7-pin SMD, Silicon-carbide (SiC) MOSFET

Catalog

1700V, 3.9A, 7-pin SMD, Silicon-carbide (SiC) MOSFET

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Package / Case	Operating Temperature
Rohm Semiconductor SCT2H12NWBTL1	1.5 Ohm	4 V	24 nC	1700 V	18 V	39 W	197 pF	N-Channel	-6 V 22 V	3.9 A	TO-263CA-7LSHYAD	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	175 °C

Catalog

1700V, 3.9A, 7-pin SMD, Silicon-carbide (SiC) MOSFET

Description

SCT2H12NWB is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.