SCT2280 Series

1200V, 14A, THD, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

1200V, 14A, THD, Silicon-carbide (SiC) MOSFET for Automotive

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Max]	Operating Temperature	Grade	Qualification
Rohm Semiconductor SCT2280KEGC11	36 nC	4 V	Through Hole	364 mOhm	N-Channel	1.2 kV	TO-247-3	TO-247N	14 A	108 W	18 V	667 pF	-6 V 22 V	175 °C
Rohm Semiconductor SCT2280KEHRC11	36 nC	4 V	Through Hole	364 mOhm	N-Channel	1.2 kV	TO-247-3	TO-247N	14 A	108 W	18 V	667 pF	-6 V 22 V	175 °C	Automotive	AEC-Q101

Catalog

1200V, 14A, THD, Silicon-carbide (SiC) MOSFET for Automotive

Description

This is SiC (Silicon Carbide) planar MOSFET. This product have high voltage resistance, low ON resistance, and fast switching speed features. AEC-Q101 qualified automotive grade product.