SCT3022AL Series

650V, 93A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Catalog

650V, 93A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor SCT3022ALGC11	2208 pF	93 A	28.6 mOhm	5.6 V	175 °C	650 V	TO-247-3	N-Channel	339 W	TO-247N	18 V	Through Hole	133 nC

650V, 93A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT3022AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.