FDN86501LZ Series

N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.6 A, 116 mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.6 A, 116 mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case
ON Semiconductor FDN86501LZ	335 pF	60 V	20 V	116 mOhm	1.5 W	MOSFET (Metal Oxide)	4.5 V 10 V	Surface Mount	5.4 nC	-55 °C	150 °C	3 V	N-Channel	SOT-23-3	2.6 A	SC-59 SOT-23-3 TO-236-3

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.6 A, 116 mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 116 mΩ at VGS= 10 V, ID= 2.6 A

• Max rDS(on)= 170 mΩ at VGS= 4.5 V, ID= 2.1 A

• High Performance Trench Technology for Extremely Low rDS(on)

• High Power and Current Handling Capability in a Widely Used Surface Mount Package

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.