FDN359BN Series

N-Channel Logic Level PowerTrench® MOSFET 30V, 2.7A, 46mΩ

Catalog

N-Channel Logic Level PowerTrench® MOSFET 30V, 2.7A, 46mΩ

Part	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Power Dissipation (Max) [Max]	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
ON Semiconductor FDN359BN	Surface Mount	46 mOhm	-55 °C	150 °C	30 V	7 nC	4.5 V 10 V	SC-59 SOT-23-3 TO-236-3	N-Channel	500 mW	20 V	SOT-23-3	2.7 A	MOSFET (Metal Oxide)	650 pF	3 V

Catalog

N-Channel Logic Level PowerTrench® MOSFET 30V, 2.7A, 46mΩ

Key Features

• 2.7 A, 30 V.

• RDS(ON)= 0.046 Ω @ VGS= 10 V

• RDS(ON)= 0.060 Ω @ VGS= 4.5 V

• Very Fast Switching

• Low Gate Charge (5nC typical)

• High Performance Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability

Description

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.