FDN5630 Series

N-Channel PowerTrench® MOSFET 60V, 1.7A, 100mΩ

Catalog

N-Channel PowerTrench® MOSFET 60V, 1.7A, 100mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
ON Semiconductor FDN5630	-55 °C	150 °C	N-Channel	500 mW	6 V 10 V	Surface Mount	100 mOhm	20 V	400 pF	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	10 nC	3 V	SOT-23-3	1.7 A	60 V

Catalog

N-Channel PowerTrench® MOSFET 60V, 1.7A, 100mΩ

Key Features

• 1.7 A, 60 V

• RDS(ON)= 0.100 Ω @ VGS= 10 V

• RDS(ON)= 0.120 Ω @ VGS= 6 V

• Optimized for use in high frequency DC/DC converters.

• Low gate charge.

• Very fast switching.

• SuperSOT™ - 3 Provides Low rDS(ON)in SOT23 Footprint

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON)in a small SOT23 footprint. ON Semiconductor’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON)specifications. The result is higher overall efficiency with less board space.