FDN8601 Series

N-Channel PowerTrench® MOSFET 100V, 2.7A, 109mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V, 2.7A, 109mΩ

Part	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
ON Semiconductor FDN8601	N-Channel	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	5 nC	210 pF	20 V	6 V 10 V	SOT-23-3	MOSFET (Metal Oxide)	109 mOhm	2.7 A	Surface Mount	4 V	100 V	1.5 W

N-Channel PowerTrench® MOSFET 100V, 2.7A, 109mΩ

• Max rDS(on)= 109 mΩ at VGS= 10 V, ID= 1.5 A

• Max rDS(on)= 175 mΩ at VGS= 6 V, ID= 1.2 A

• High Performance Trench Technology for Extremely Low rDS(on)

• High Power and Current Handling Capability in a Widely Used Surface Mount Package

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been optimized for rDS(on), switching performance and ruggedness.