FDN5618P Series

60V P-Channel PowerTrench® MOSFET -1.25A, 170mΩ

Catalog

60V P-Channel PowerTrench® MOSFET -1.25A, 170mΩ

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type
ON Semiconductor FDN5618P	170 mOhm	13.8 nC	-55 °C	150 °C	430 pF	SC-59 SOT-23-3 TO-236-3	3 V	20 V	500 mW	1.25 A	4.5 V 10 V	MOSFET (Metal Oxide)	P-Channel	60 V	SOT-23-3	Surface Mount

60V P-Channel PowerTrench® MOSFET -1.25A, 170mΩ

• –1.25 A, –60 V

• RDS(ON)= 0.200Ω @ VGS= –10 V

• RDS(ON)= 0.230Ω @ VGS= –4.5 V

• Fast Switching Speed

• High Performance Trench Technology for Extremely Low rDS(on)

This 60V P-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications.