FDN86265P Series

P-Channel PowerTrench® MOSFET -150V, -0.8A, 1.2Ω

Catalog

P-Channel PowerTrench® MOSFET -150V, -0.8A, 1.2Ω

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)
ON Semiconductor FDN86265P	210 pF	4 V	1.5 W	SOT-23-3	MOSFET (Metal Oxide)	4.1 nC	1.2 Ohm	P-Channel	Surface Mount	-55 °C	150 °C	800 mA	SC-59 SOT-23-3 TO-236-3	6 V 10 V	150 V	25 V

Catalog

P-Channel PowerTrench® MOSFET -150V, -0.8A, 1.2Ω

Key Features

• Max rDS(on)= 1.2 Ω at VGS= -10 V, ID= -0.8 A

• Max rDS(on)= 1.4 Ω at VGS= -6 V, ID= -0.7 A

• Very Low rDS(on)Mid Voltage P-Channel Silicon Technology Optimized for Low Qg

• This product is optimised for fast switching applications as well as load switch applications

• 100% UIL tested

• RoHS Compliant

Description

This P-Channel MOSFET is produced using an advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.