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ON Semiconductor

Series List(12147)

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Series	Category	# Parts	Status	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

NXH030P120M3F1PTGSilicon Carbide (SiC) Module – EliteSiC, 30 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package	Discrete Semiconductor Products	1	Active	The NXH030P120M3F1PTG is a power module containing 30 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with Alumina (AL2O3) DBC in an F1 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.
NXH040P120MNF1SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET	FET, MOSFET Arrays	3	Active	The NXH040P120MNF1 is a SiC MOSFET module containing a 40 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.
NXH100B120H3Q0Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.	Discrete Semiconductor Products	4	Active	The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
NXH160T120L2Q2F2SGPower Integrated Module (PIM), IGBT 1200 V, 160 A and 600 V, 100 A	IGBTs	1	Obsolete	The NXH160T120L2Q2F2SG is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 160A/1200V half-bridge IGBTs with inverse diodes, two neutral point 120A/1200V rectifiers, two 100A/600V neutral point IGBTs with inverse diodes, two half-bridge 60A/600V rectifiers and a negative temperature coefficient thermistor (NTC).
NXH200T120H3Q2Si/SiC Hybrid Module, Split T-Type NPC inverter	Transistors	2	Active	The NXH200T120H3Q2 is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 200A/1200V half-bridge IGBTs with inverse diodes, two neutral point 100A/650V SiC diodes, two 150A/650V neutral point IGBTs with inverse diodes, two half-bridge 150A/1200V rectifiers and a negative temperature coefficient thermistor (NTC).
NXH200T120H3Q2F2STNGSi/SiC Hybrid Module, Split T-Type NPC inverter	IGBT Modules	1	Active	The NXH200T120H3Q2 is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 200A/1200V half-bridge IGBTs with inverse diodes, two neutral point 100A/650V SiC diodes, two 150A/650V neutral point IGBTs with inverse diodes, two half-bridge 150A/1200V rectifiers and a negative temperature coefficient thermistor (NTC).
NXH240	Discrete Semiconductor Products	1	LTB
NXH240B120H3Q1Power Integrated Module (PIM) 3-channel 1200 V IGBT + SiC Boost, 80 A IGBT and 20 A SiC diode	Discrete Semiconductor Products	1	Active	The NXH240B120H3Q1PG is a 3-channel 1200 V IGBT + SiC Boost module. Each channel consists of a fast switching 80 A IGBT, a 20 A SiC diode, a bypass diode and an IGBT protection diode. The module contains an NTC thermistor.
NXH240B120H3Q1P1GSi/SiC Hybrid Power Integrated Module (PIM), 3-channel Boost	Transistors	1	Active	The NXH240B120H3Q1P1G is a 3-channel 1200 V IGBT + SiC Boost module. Each channel consists of a fast switching 80 A IGBT, a 30 A SiC diode, a bypass diode and an IGBT protection diode. The module contains an NTC thermistor.
NXH25	Discrete Semiconductor Products	1	Obsolete