NXH100B120H3Q0 Series

Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.

Catalog

Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.

Part	Vce(on) (Max) @ Vge, Ic	Configuration	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	Current - Collector (Ic) (Max)	Mounting Type	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Input	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Input Capacitance (Cies) @ Vce	Current - Collector (Ic) (Max) [Max]
ON Semiconductor NXH100B120H3Q0STG	2.3 V	2 Independent	32.5	22-PIM/Q0BOOST	55	50 A	Chassis Mount	186 W	150 °C	-40 °C	Trench Field Stop	Standard	Module	1200 V	200 µA	9.075 nF
ON Semiconductor NXH100B120H3Q0PG	2.3 V	2 Independent	32.5	22-PIM	55		Chassis Mount	186 W	150 °C	-40 °C	Trench Field Stop	Standard	Module	1200 V	200 µA	9.075 nF	61 A
ON Semiconductor NXH100B120H3Q0SG	2.3 V	2 Independent	32.5	22-PIM/Q0BOOST	55		Chassis Mount	186 W	150 °C	-40 °C	Trench Field Stop	Standard	Module	1200 V	200 µA	9.075 nF	61 A
ON Semiconductor NXH100B120H3Q0PTG	2.3 V	2 Independent	32.5	22-PIM	55	50 A	Chassis Mount	186 W	150 °C	-40 °C	Trench Field Stop	Standard	Module	1200 V	200 µA	9.075 nF

Catalog

Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.

Key Features

• IGBT Specifications: VCE(sat) = 1.77 V, ESW = 2200 uJ

• 25 A / 1600 V Bypass and Anti−parallel Diodes

• SiC Rectifier Specification: VF = 1.44 V

• Solder pin and press-fit pin options available

Description

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.